SIMULASI PERHITUNGAN PROBABILITAS TEROBOSAN PADA STRUKTUR RESONANCE TUNNELING DIODE
Keywords:
probabilitas terobosan, dinding potensial ganda, persamaan Schrodinger, propagasi matrik, level energi diskritAbstract
Penggunaan komputer untuk tujuan simulasi karakterisasi divais elektronik menjadi kebutuhan yang mendasar, terutama untuk proses analisis dan prediksi karakteristik divais. Makalah ini akan membahas perhitungan matematika dan simulasi dari probabilitas terobosan yang melewati material berstruktur dinding potensial ganda. Hasil simulasi menunjukkan bahwa probabilitas terobosan mengalami kenaikan yang signifikan pada level-level energi tertentu. Kenaikan ini berhubungan erat dengan munculnya level energi diskrit pada sumur potensial kuantum dan terjadinya interferensi gelombang elektron pada level-level energi diskrit tersebut. Perhitungan ini sangat berguna dalam analisa dan disain divais berstruktur nanometer baik itu divais Resonance Tunneling Diode, single electron device maupun nano transistor.
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